TOSHIBA · Transistors (BJTs) · MPN 2SD2686(TE12L,ZC)
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| Vbe Saturation(VBE(sat)) | 2V |
|---|---|
| Current - Collector Cutoff | 10uA |
| Vbe On(VBE(on)) | - |
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 60V |
| DC Current Gain | 2000 |
| Emitter-Base Voltage VEBO | 8V |
| Pd - Power Dissipation | 1W |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Vce Saturation(VCE(sat)) | 1.2V;1.5V |
| Operating Temperature | - |
60V 2000 NPN 1A SC-62 Single Bipolar Transistors RoHS