TOSHIBA · Transistors (BJTs) · MPN 2SC5886A(T6L1.NQ)
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 9V |
| DC Current Gain | 400 |
| Pd - Power Dissipation | 20W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 5A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 220mV |
Bipolar (BJT) Transistor NPN 50V 5A 20W Surface Mount TO-252