TOSHIBA 2SC5200N(S1,E,S)

TOSHIBA · Transistors (BJTs) · MPN 2SC5200N(S1,E,S)

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO230V
Emitter-Base Voltage VEBO5V
DC Current Gain80
Pd - Power Dissipation150W
Number1 NPN
typeNPN
Current - Collector(Ic)15A
Vce Saturation(VCE(sat))3V

Technical details

230V 80 1 NPN NPN 15A TO-3P(N) Single Bipolar Transistors RoHS

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