TOSHIBA 2SA1587-GR,LF

TOSHIBA · Transistors (BJTs) · MPN 2SA1587-GR,LF

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation100mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+125℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 100mW Surface Mount SOT-323

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