Tokmas STP3N150F

Tokmas · FETs & Power MOSFETs · MPN STP3N150F

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Specifications

Gate Charge(Qg)27.5nC@10V
Drain to Source Voltage1.5kV
Output Capacitance(Coss)104pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)2.4pF
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.938nF

Technical details

1.5kV 3A 30W Through Hole TO-220F

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