Tokmas SI7617DN-T1-GE3(TOKMAS)

Tokmas · FETs & Power MOSFETs · MPN SI7617DN-T1-GE3(TOKMAS)

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)234pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation38W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)199pF
Number1 P-Channel
Input Capacitance(Ciss)1.779nF
TypeP-Channel

Technical details

P-Channel 30V 40A 38W Surface Mount DFN-8L(3x3)

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