Tokmas SI7288DP-T1-GE3(TOKMAS)

Tokmas · FETs & Power MOSFETs · MPN SI7288DP-T1-GE3(TOKMAS)

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Specifications

Gate Charge(Qg)32nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)220pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation34.7W
Reverse Transfer Capacitance (Crss@Vds)175pF
RDS(on)20mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)2.15nF
TypeN-Channel

Technical details

N-Channel Array 40V 25A 34.7W Surface Mount DFN-8(5x6)

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