Tokmas SI7149ADP-T1-GE3(TOKMAS)

Tokmas · FETs & Power MOSFETs · MPN SI7149ADP-T1-GE3(TOKMAS)

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)183nC@10V
Current - Continuous Drain(Id)105A
Output Capacitance(Coss)723pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)5.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.968nF
TypeP-Channel

Technical details

P-Channel 30V 105A 96W Surface Mount DFN-8(5x6)

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