Tokmas NVD5117PLT4G(TOKMAS)

Tokmas · FETs & Power MOSFETs · MPN NVD5117PLT4G(TOKMAS)

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Specifications

Gate Charge(Qg)114nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)60A
Output Capacitance(Coss)258pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation270W
RDS(on)19mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)211pF
Number1 P-Channel
Input Capacitance(Ciss)4.399nF
TypeP-Channel

Technical details

P-Channel 60V 60A 270W Surface Mount TO-252

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