Tokmas IXTY01N100

Tokmas · FETs & Power MOSFETs · MPN IXTY01N100

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage1kV
Output Capacitance(Coss)14.5pF
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
RDS(on)55Ω@10V
Reverse Transfer Capacitance (Crss@Vds)2.8pF
Number1 N-channel
Input Capacitance(Ciss)70pF

Technical details

N-Channel 1kV 0.5A 25W Surface Mount TO-252

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