Tokmas IXTH1N200P3(TOKMAS)

Tokmas · FETs & Power MOSFETs · MPN IXTH1N200P3(TOKMAS)

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Specifications

Gate Charge(Qg)15nC
Drain to Source Voltage2.2kV
Current - Continuous Drain(Id)8.7A
Output Capacitance(Coss)13pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation94W
Reverse Transfer Capacitance (Crss@Vds)2.7pF
RDS(on)1.4Ω
Number1 N-channel
Input Capacitance(Ciss)168pF
TypeN-Channel

Technical details

2.2kV 8.7A 94W Through Hole TO-247-3

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