Tokmas · FETs & Power MOSFETs · MPN IXTH1N200P3(TOKMAS)
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| Gate Charge(Qg) | 15nC |
|---|---|
| Drain to Source Voltage | 2.2kV |
| Current - Continuous Drain(Id) | 8.7A |
| Output Capacitance(Coss) | 13pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 94W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.7pF |
| RDS(on) | 1.4Ω |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 168pF |
| Type | N-Channel |
2.2kV 8.7A 94W Through Hole TO-247-3