Tokmas IRFBG30PBF

Tokmas · FETs & Power MOSFETs · MPN IRFBG30PBF

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Specifications

Gate Charge(Qg)17nC
Drain to Source Voltage1kV
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)4.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)850pF

Technical details

1kV 4A 40W Through Hole TO-220-3

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