Tokmas IPT007N06N(TOKMAS)

Tokmas · FETs & Power MOSFETs · MPN IPT007N06N(TOKMAS)

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Specifications

Gate Charge(Qg)274nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)4.764nF
Current - Continuous Drain(Id)500A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)2nF
RDS(on)0.68mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)17.306nF
TypeN-Channel

Technical details

N-Channel 60V 500A 375W HSOF-8

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