Tokmas · FETs & Power MOSFETs · MPN IPB80P04P4L04ATMA1(TOKMAS)
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| Gate Charge(Qg) | 115nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 101W |
| RDS(on) | 3.8mΩ@10V |
| Number | 1 P-Channel |
| Type | P-Channel |
P-Channel 40V Surface Mount TO-263-3