Tokmas · FETs & Power MOSFETs · MPN IPB025N10N3G(TOKMAS)
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| Gate Charge(Qg) | 131nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.13nF |
| Current - Continuous Drain(Id) | 280A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 286W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.2nF |
| Vgs | ±20V |
| Type | N-Channel |
N-Channel 100V 280A 286W Surface Mount TO-263-7L