Tokmas IPB019N08N5(TOKMAS)

Tokmas · FETs & Power MOSFETs · MPN IPB019N08N5(TOKMAS)

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Specifications

Gate Charge(Qg)124nC@10V
Drain to Source Voltage85V
Output Capacitance(Coss)1.18nF
Current - Continuous Drain(Id)220A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)97pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.234nF
TypeN-Channel

Technical details

N-Channel 85V 220A 250W Surface Mount TO-263-7L

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