Tokmas · FETs & Power MOSFETs · MPN FQD5P20TM
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| Gate Charge(Qg) | 18nC@100V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 1.5Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 480pF |
200V 5A 4V 35W 1.5Ω@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS