Tokmas · FETs & Power MOSFETs · MPN CID9N65E3
No reviews yet — be the first to review Tokmas CID9N65E3.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 1.2nC |
| Output Capacitance(Coss) | 13pF |
| Current - Continuous Drain(Id) | 4.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 39W |
| Technology | E-mode |
| RDS(on) | 334mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.3pF |
| Input Capacitance(Ciss) | 42pF |
650V 4.8A 1.5V 39W 334mΩ TO-252-3L Single FETs, MOSFETs RoHS