Tokmas CID18N65D

Tokmas · FETs & Power MOSFETs · MPN CID18N65D

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)3.3nC
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation113W
Technology-
RDS(on)100mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)0.5pF
Input Capacitance(Ciss)125pF
TypeN-Channel

Technical details

650V 17A 1.7V 113W 100mΩ@10V N-Channel DFN-8(8x8) Single FETs, MOSFETs RoHS

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