Tokmas · FETs & Power MOSFETs · MPN CID10N65E3
No reviews yet — be the first to review Tokmas CID10N65E3.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 2.3nC |
| Current - Continuous Drain(Id) | 10A |
| Output Capacitance(Coss) | 27pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 75W |
| Technology | E-mode |
| RDS(on) | 160mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 83pF |
650V 10A 1.6V 75W 160mΩ 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS