Tokmas CI90N120SM

Tokmas · FETs & Power MOSFETs · MPN CI90N120SM

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Specifications

Gate Charge(Qg)164nC
Configuration-
Drain to Source Voltage1.2kV
Output Capacitance(Coss)231pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation463W
RDS(on)27mΩ@20V
Reverse Transfer Capacitance (Crss@Vds)42.8pF
Number1 N-channel
Input Capacitance(Ciss)4.7nF

Technical details

N-Channel 1.2kV 90A 463W Through Hole TO-247-3

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