Tokmas CI7N170SM

Tokmas · FETs & Power MOSFETs · MPN CI7N170SM

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Specifications

Gate Charge(Qg)23nC
Drain to Source Voltage1.7kV
Output Capacitance(Coss)13pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation62W
Reverse Transfer Capacitance (Crss@Vds)1.8pF
RDS(on)850mΩ
Number1 N-channel
Input Capacitance(Ciss)194pF
TypeN-Channel

Technical details

N-Channel 1.7kV 7A 62W Through Hole TO-247-3

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