Tokmas CI60N120SM4

Tokmas · FETs & Power MOSFETs · MPN CI60N120SM4

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Specifications

Gate Charge(Qg)160nC
Configuration-
Drain to Source Voltage1.2kV
Output Capacitance(Coss)162pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation330W
RDS(on)45mΩ@20V
Reverse Transfer Capacitance (Crss@Vds)29pF
Number1 N-channel
Input Capacitance(Ciss)3.55nF

Technical details

N-Channel 1.2kV 60A 330W Through Hole TO-247-4L

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