Tokmas CI60N120SM

Tokmas · FETs & Power MOSFETs · MPN CI60N120SM

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Specifications

Gate Charge(Qg)205nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation330W
RDS(on)52mΩ
Reverse Transfer Capacitance (Crss@Vds)37pF
Number1 N-channel
Input Capacitance(Ciss)3.5nF
TypeN-Channel

Technical details

1.2kV 60A 4V 330W 52mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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