Tokmas CI58N330SM4

Tokmas · FETs & Power MOSFETs · MPN CI58N330SM4

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Specifications

Configuration-
Drain to Source Voltage3.3kV
Gate Charge(Qg)212nC
Current - Continuous Drain(Id)58A
Output Capacitance(Coss)115pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation500W
Reverse Transfer Capacitance (Crss@Vds)4.9pF
RDS(on)60mΩ
Number1 N-channel
Input Capacitance(Ciss)5.031nF

Technical details

3.3kV 58A 4V 500W 60mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS

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