Tokmas CI30N65SM

Tokmas · FETs & Power MOSFETs · MPN CI30N65SM

No reviews yet — be the first to review Tokmas CI30N65SM.

Specifications

Gate Charge(Qg)65nC
Configuration-
Drain to Source Voltage650V
Output Capacitance(Coss)172pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation171W
RDS(on)65mΩ@20V
Reverse Transfer Capacitance (Crss@Vds)77pF
Number1 N-channel
Input Capacitance(Ciss)1.7nF

Technical details

N-Channel 650V 30A 171W Through Hole TO-247-3

Related FETs & Power MOSFETs