Tokmas CI30N120SMD7

Tokmas · FETs & Power MOSFETs · MPN CI30N120SMD7

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Specifications

Gate Charge(Qg)102nC
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)31A
Output Capacitance(Coss)91pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)1.8pF
RDS(on)98mΩ
Number1 N-channel
Input Capacitance(Ciss)1.98nF
TypeN-Channel

Technical details

1.2kV 31A 200W Surface Mount TO-263-7L

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