Tokmas CI30N120SM

Tokmas · FETs & Power MOSFETs · MPN CI30N120SM

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)102nC
Current - Continuous Drain(Id)31A
Output Capacitance(Coss)91pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)1.8pF
RDS(on)98mΩ
Number1 N-channel
Input Capacitance(Ciss)1.98nF
TypeN-Channel

Technical details

1.2kV 31A 4V 200W 98mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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