Tokmas CI30N120M4(TOKMAS)

Tokmas · FETs & Power MOSFETs · MPN CI30N120M4(TOKMAS)

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Specifications

Gate Charge(Qg)75nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)56pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)96mΩ
Number1 N-channel
Input Capacitance(Ciss)1.1nF
TypeN-Channel

Technical details

N-Channel 1.2kV Through Hole TO-247-4

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