Tokmas CI300R120MD

Tokmas · FETs & Power MOSFETs · MPN CI300R120MD

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)1.284uC
ConfigurationHalf-Bridge
Output Capacitance(Coss)2.307nF
Current - Continuous Drain(Id)575A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.786kW
Reverse Transfer Capacitance (Crss@Vds)82.5pF
RDS(on)4mΩ
Number2 N-Channel
Input Capacitance(Ciss)30.25nF

Technical details

1.2kV 575A 4V 1.786kW 4mΩ 2 N-Channel N-Channel Screw Terminals Single FETs, MOSFETs RoHS

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