Tokmas CI19N120SM

Tokmas · FETs & Power MOSFETs · MPN CI19N120SM

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Specifications

Gate Charge(Qg)50nC
Configuration-
Drain to Source Voltage1.2kV
Output Capacitance(Coss)8pF
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation125W
RDS(on)165mΩ@20V
Reverse Transfer Capacitance (Crss@Vds)36pF
Number1 N-channel
Input Capacitance(Ciss)950pF

Technical details

N-Channel 1.2kV 19A 125W Through Hole TO-247-3

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