Tokmas CI100P04

Tokmas · FETs & Power MOSFETs · MPN CI100P04

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Specifications

Drain to Source Voltage40V
Configuration-
Gate Charge(Qg)117nC@10V
Output Capacitance(Coss)544pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation107W
RDS(on)5.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)344pF
Number1 P-Channel
Input Capacitance(Ciss)6.637nF

Technical details

P-Channel 40V 100A 107W Surface Mount TO-252

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