Tokmas CI011N04

Tokmas · FETs & Power MOSFETs · MPN CI011N04

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Specifications

Drain to Source Voltage40V
Configuration-
Gate Charge(Qg)145nC@10V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)189A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation35W
RDS(on)1.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)117pF
Number1 N-channel
Input Capacitance(Ciss)8.055nF

Technical details

N-Channel 40V 189A 35W Surface Mount PDFN5x6-8L

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