Tokmas BSC190N15NS3G(TOKMAS)

Tokmas · FETs & Power MOSFETs · MPN BSC190N15NS3G(TOKMAS)

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)1.099nF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)104pF
RDS(on)18mΩ
Number1 N-channel
Input Capacitance(Ciss)3.339nF
TypeN-Channel

Technical details

N-Channel 150V 50A 110W Surface Mount DFN-8(5x6)

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