Tokmas BSC160N10NS3G(TOKMAS)

Tokmas · FETs & Power MOSFETs · MPN BSC160N10NS3G(TOKMAS)

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)147pF
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)4.9pF
RDS(on)14mΩ
Number1 N-channel
Input Capacitance(Ciss)840pF
TypeN-Channel

Technical details

N-Channel 100V 44A 50W Surface Mount DFN-8(5x6)

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