Tokmas BSC109N10NS3G(TOKMAS)

Tokmas · FETs & Power MOSFETs · MPN BSC109N10NS3G(TOKMAS)

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.55nF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)9.9mΩ
Number1 N-channel
Input Capacitance(Ciss)2.3nF
TypeN-Channel

Technical details

N-Channel 100V 55A 75W Surface Mount DFN-8(5x6)

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