TI · FETs & Power MOSFETs · MPN TPS1120DR
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| Current - Continuous Drain(Id) | 1.17A |
|---|---|
| RDS(on) | 180mΩ@10V |
| Pd - Power Dissipation | 840mW |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 15V |
| Type | P-Channel |
| Number | 2 P-Channel |
| Gate Charge(Qg) | 5.45nC@10V |
| Operating Temperature | -40℃~+150℃ |
P-Channel 15V 1.17A 840mW Surface Mount SOIC-8