TI TPS1101PWR

TI · FETs & Power MOSFETs · MPN TPS1101PWR

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Specifications

Drain to Source Voltage15V
Gate Charge(Qg)11.25nC@10V
Current - Continuous Drain(Id)2.18A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation710mW
RDS(on)190mΩ@10V
Number1 P-Channel
TypeP-Channel

Technical details

15V 2.18A 1.5V 710mW 190mΩ@10V 1 P-Channel P-Channel TSSOP-16 Single FETs, MOSFETs RoHS

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