TI TPS1100PW

TI · FETs & Power MOSFETs · MPN TPS1100PW

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Specifications

Gate Charge(Qg)5.45nC@10V
Drain to Source Voltage15V
Current - Continuous Drain(Id)1.27A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation504mW
RDS(on)180mΩ@10V
Number1 P-Channel

Technical details

15V 1.27A 1.5V 504mW 180mΩ@10V 1 P-Channel TSSOP-8 Single FETs, MOSFETs RoHS

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