TI · FETs & Power MOSFETs · MPN TPS1100PW
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| Gate Charge(Qg) | 5.45nC@10V |
|---|---|
| Drain to Source Voltage | 15V |
| Current - Continuous Drain(Id) | 1.27A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 504mW |
| RDS(on) | 180mΩ@10V |
| Number | 1 P-Channel |
15V 1.27A 1.5V 504mW 180mΩ@10V 1 P-Channel TSSOP-8 Single FETs, MOSFETs RoHS