TI · FETs & Power MOSFETs · MPN TPS1100DR
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| Gate Charge(Qg) | 5.45nC@10V |
|---|---|
| Drain to Source Voltage | 15V |
| Current - Continuous Drain(Id) | 1.6A |
| Operating Temperature - | -40℃~+125℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 791mW |
| RDS(on) | 180mΩ@10V |
| Number | 1 P-Channel |
| Type | P-Channel |
P-Channel 15V 1.6A 791mW Surface Mount SOIC-8