TI · FETs & Power MOSFETs · MPN TPS1100D
No reviews yet — be the first to review TI TPS1100D.
| Gate Charge(Qg) | 5.45nC@10V |
|---|---|
| Drain to Source Voltage | 15V |
| Current - Continuous Drain(Id) | 1.6A |
| Operating Temperature - | -40℃~+125℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 791mW |
| RDS(on) | 180mΩ@10V |
| Number | 1 P-Channel |
| Type | P-Channel |
15V 1.6A 1.5V 791mW 180mΩ@10V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS