TI · FETs & Power MOSFETs · MPN TPIC5621LDW
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| Configuration | Common source |
|---|---|
| Gate Charge(Qg) | 3.7nC@5V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 125pF |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -40℃~+125℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 1.389W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 480mΩ@5V |
| Input Capacitance(Ciss) | 240pF |
| Type | N-Channel |
60V 1A 2.2V 1.389W 480mΩ@5V N-Channel Single FETs, MOSFETs