TI TPIC5403DW

TI · FETs & Power MOSFETs · MPN TPIC5403DW

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Specifications

Gate Charge(Qg)8nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)2.25A
Operating Temperature --40℃~+125℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation1.39W
RDS(on)270mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)100pF
Input Capacitance(Ciss)200pF
TypeN-Channel

Technical details

60V 2.25A 2.2V 1.39W 270mΩ@10V N-Channel Single FETs, MOSFETs

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