TI TPIC5302D

TI · FETs & Power MOSFETs · MPN TPIC5302D

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)9.8nC@10V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)1.4A
Operating Temperature --40℃~+125℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation1.087W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)350mΩ@10V
Input Capacitance(Ciss)170pF
TypeN-Channel

Technical details

60V 1.4A 2.2V 1.087W 350mΩ@10V N-Channel Single FETs, MOSFETs

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