TI TPIC5223LD

TI · FETs & Power MOSFETs · MPN TPIC5223LD

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Specifications

Gate Charge(Qg)3.8nC@5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)1A
Operating Temperature --40℃~+125℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation950mW
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)430mΩ@5V
Input Capacitance(Ciss)190pF
TypeN-Channel

Technical details

60V 1A 2.2V 950mW 430mΩ@5V N-Channel Single FETs, MOSFETs

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