TI · FETs & Power MOSFETs · MPN TPIC5223LD
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| Gate Charge(Qg) | 3.8nC@5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -40℃~+125℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 950mW |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 430mΩ@5V |
| Input Capacitance(Ciss) | 190pF |
| Type | N-Channel |
60V 1A 2.2V 950mW 430mΩ@5V N-Channel Single FETs, MOSFETs