TI TPIC2322LD

TI · FETs & Power MOSFETs · MPN TPIC2322LD

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)2.3nC@5V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)750mA
Operating Temperature --40℃~+125℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation950mW
RDS(on)1Ω@5V
Reverse Transfer Capacitance (Crss@Vds)40pF
Input Capacitance(Ciss)145pF
TypeN-Channel

Technical details

60V 750mA 2.2V 950mW 1Ω@5V N-Channel Single FETs, MOSFETs

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