TI TPIC1501ADWR

TI · FETs & Power MOSFETs · MPN TPIC1501ADWR

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)5.6nC@10V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)3A
Operating Temperature --40℃~+125℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation2.86W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)120mΩ@10V
Input Capacitance(Ciss)170pF
TypeN-Channel

Technical details

20V 3A 2.1V 2.86W 120mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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