TI · FETs & Power MOSFETs · MPN RFW2N06RLE
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 20nC@5V |
| Output Capacitance(Coss) | 175pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| RDS(on) | 200mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 535pF |
| Type | N-Channel |
60V 2A 2V 200mΩ@5V 1 N-channel N-Channel DIP-4 Single FETs, MOSFETs