TI RFP8N20

TI · FETs & Power MOSFETs · MPN RFP8N20

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Specifications

Drain to Source Voltage200V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)500mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)750pF
TypeN-Channel

Technical details

200V 8A 4V 500mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs

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