TI RFP8N18L

TI · FETs & Power MOSFETs · MPN RFP8N18L

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Specifications

Drain to Source Voltage180V
Output Capacitance(Coss)900pF
Current - Continuous Drain(Id)8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)500mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)250pF
TypeN-Channel

Technical details

180V 8A 2V 500mΩ@5V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs

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